High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels-Reference-Cited by-同舟云学术

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High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels

Published:2003-06 Issue:6 Volume:15 Page:846-848
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Choi C.-S.,Kang H.-S.,Woo-Young Choi ,Kim H.-J.,Choi W.-J.,Kim D.-H.,Jang K.-C.,Seo K.-S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/27024/01200219.pdf?arnumber=1200219

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