Interaction between electromigration and mechanical-stress-induced migration; New insights by a simple, wafer-level resistometric technique-Reference-Cited by-同舟云学术

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Interaction between electromigration and mechanical-stress-induced migration; New insights by a simple, wafer-level resistometric technique

Published:1991-03 Issue:3 Volume:38 Page:469-475
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Baldini G.L.,Scorzoni A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/2499/00075155.pdf?arnumber=75155

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electromigration Failure Controlled by Aging-like Gradual Resistance Shift in Co-Capped Cu Interconnects;2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2021-09-15

2. Electromigration in ULSI interconnects;Materials Science and Engineering: R: Reports;2007-10

3. Modeling of Electromigration in Interconnects;Springer Series in MATERIALS SCIENCE;2004

4. Early electromigration effects and early resistance changes;Microelectronics Reliability;1999-11

5. A study of the thermal behavior of different test patterns used in differential high resolution electromigration measurements;Microelectronics Reliability;1999-05

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