A Comparison Between Single and Differential-Ended Doherty Power Stages in GaN Technology for 28-GHz 5G Applications-Reference-Cited by-同舟云学术

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A Comparison Between Single and Differential-Ended Doherty Power Stages in GaN Technology for 28-GHz 5G Applications

Published:2024-06-09 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)
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Author:

Minnella Alessandro Domenico¹,Papotto Giuseppe²,Parisi Alessandro²,Palmisano Giuseppe¹

Affiliation:

1. University of Catania,DIEEI,Catania,Italy

2. STMicroelectronics,Catania,Italy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10559643/10559661/10559728.pdf?arnumber=10559728

Reference7 articles.

1. 5G Infrastructure RF Solutions: Challenges and Opportunities

2. A GaN PA for 4G LTE-Advanced and 5G: Meeting the Telecommunication Needs of Various Vertical Sectors Including Automobiles, Robotics, Health Care, Factory Automation, Agriculture, Education, and More

3. A Ka-Band High Efficiency Doherty Power Amplifier MMIC using GaN-HEMT for 5G Application

4. 8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications

5. A 28 GHz MMIC Doherty Power Amplifier in GaN on Si Technology for 5G Applications

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