A Bit-Line Biasing Circuit for Analog In-Memory Computing Based on Phase Change Memory-Reference-Cited by-同舟云学术

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A Bit-Line Biasing Circuit for Analog In-Memory Computing Based on Phase Change Memory

Published:2024-06-09 Issue: Volume:15 Page:1-4
ISSN:
Container-title:2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)
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Author:

Lico A.¹,Antolini A.¹,Zavalloni F.¹,Scarselli E. Franchi¹,Zurla R.²,Pasotti M.²

Affiliation:

1. ARCES-DEI - University of Bologna,Bologna,Italy,40123

2. STMicroelectronics,Agrate Brianza,Italy,20864

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10559643/10559661/10559693.pdf?arnumber=10559693

Reference11 articles.

1. Memory devices and applications for in-memory computing. Nat. Nanotechnol;Sebastian;Nature,2020

2. Artificial Intelligence: Why moving it to the Edge?

3. HERMES-Core—A 1.59-TOPS/mm² PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

4. Phase change memory technology

5. Programming algorithms for multilevel phase-change memory

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