Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz-Reference-Cited by-同舟云学术

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Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz

Published:2021-09 Issue:9 Volume:56 Page:2635-2646
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yoshioka Takaaki^ORCID,Harauchi Kenji,Sugitani Takumi,Maehara Hiroaki,Yamasaki Takashi,Ichinohe Hiroaki,Miyashita Miyo,Yamamoto Kazuya,Goto Seiki

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9523417/09499366.pdf?arnumber=9499366

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ku-Band 100-W High-Power Amplifier MMIC Using 0.2-µm GaN Technology;IEEE Microwave and Wireless Technology Letters;2024-01

2. Design of Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology;Micromachines;2023-10-27

3. Nonlinear Capacitance Compensation Technique in a Linearity-Enhanced and Broadband GaN PA MMIC for Ku-/K-Band Applications;IEEE Transactions on Microwave Theory and Techniques;2023-07

4. Inverse Design of Bonding Wire Array Based on Multifidelity Data-Enabled Neural Networks;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-07

5. A 4.5-W, 18.5–24.5-GHz GaN Power Amplifier Employing Chebyshev Matching Technique;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023-02

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