Broadband Millimeter-Wave 5G CMOS Power Amplifiers With High Efficiency at Power Backoff and ESD-Protection in 22nm FD-SOI-Reference-Cited by-同舟云学术

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Broadband Millimeter-Wave 5G CMOS Power Amplifiers With High Efficiency at Power Backoff and ESD-Protection in 22nm FD-SOI

Published:2021-08-09 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)
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Author:

Mayeda Jill,Lie Donald Y.C.,Lopez Jerry

Funder

Air Force Research Laboratory

Advanced Research Projects Agency

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9531648/9531647/09531817.pdf?arnumber=9531817

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and performance optimization of broadband millimeter-wave power amplifier based on 45nm SOI process;Fourth International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2024);2024-06-05

2. A 22FDX^® 2 Stack Power Amplifier for 5G Applications with 19dBm P^sat and 49% Peak PAE;2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR);2024-01-21

3. A Ku-Band Power Amplifier in 22nm FDSOI;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

4. Multi-physics Analysis of Low Earth Orbit Satellite Devices and Communication Components;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05

5. Broadband Linear and Highly-Efficient Millimeter-Wave Power Amplifiers Design in 5G FR2 Band;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05

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