Analysis of latchup-induced photon emissions
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/2071/00057172.pdf?arnumber=57172
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Latchup Analysis Using Emission Microscopy;Microelectronics Reliability;2003-09
2. Novel technique for reliability testing of silicon integrated circuits;SPIE Proceedings;2001-04-23
3. Observation of photon emissions from hot electrons and latch-up at the cleaved surface of CMOS structures;Solid-State Electronics;1996-11
4. A study of latch-up hysteresis in n-well CMOS by means of I–V characteristics and photoemission techniques;Solid-State Electronics;1993-04
5. Latch-up DC triggering and holding characteristics of n-well, twin-tub and epitaxial CMOS technologies;IEE Proceedings G Circuits, Devices and Systems;1991
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