Exploiting the ambipolarity in emerging transistors for high-frequency applications
Author:
Affiliation:
1. Universitat Autònoma de Barcelona,Departament d'Enginyeria Electrònica Escola d'Enginyeria,Barcelona,Spain
2. UPALM, Edif. Z-4 3er Piso Instituto Politécnico Nacional,Mexico City,Mexico
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9969904/9970010/09970151.pdf?arnumber=9970151
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1. Design of GFET-based active modulators leveraging device performance reproducibility conditions;2023 38th Conference on Design of Circuits and Integrated Systems (DCIS);2023-11-15
2. Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics;Small;2023-08-23
3. Extending the Small-Signal Modeling of GFETs to Ambipolarity Regime;2023 14th Spanish Conference on Electron Devices (CDE);2023-06-06
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