Exploiting the ambipolarity in emerging transistors for high-frequency applications
Author:
Affiliation:
1. Universitat Autònoma de Barcelona,Departament d'Enginyeria Electrònica Escola d'Enginyeria,Barcelona,Spain
2. UPALM, Edif. Z-4 3er Piso Instituto Politécnico Nacional,Mexico City,Mexico
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9969904/9970010/09970151.pdf?arnumber=9970151
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