On the Fitting and Improvement of RRAM Stanford-Based Model Parameters Using TiN/Ti/HfO<sub>2</sub>/W Experimental Data-Reference-Cited by-同舟云学术

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On the Fitting and Improvement of RRAM Stanford-Based Model Parameters Using TiN/Ti/HfO₂/W Experimental Data

Published:2022-11-16 Issue: Volume: Page:
ISSN:
Container-title:2022 37th Conference on Design of Circuits and Integrated Circuits (DCIS)
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Author:

Mahboubi V.¹^ORCID,Arumi D.¹^ORCID,Gomez A.¹^ORCID,Rodriguez R.¹^ORCID,Manich S.¹^ORCID

Affiliation:

1. Universitat Politècnica De Catalunya (UPC),Departamento de Ingeniería Electrónica,Barcelona,Spain

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9969904/9970010/09970051.pdf?arnumber=9970051

Reference14 articles.

1. Simulation of serial RRAM cell based on a Verilog-A compact model

2. Simulation of RRAM memory circuits, a Verilog-A compact modeling approach

3. A Modeling Methodology for Resistive RAM Based on Stanford-PKU Model With Extended Multilevel Capability

4. Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Fine Tuning of RRAM Resistance Under Variability Using Current Pulses at SET;2024 IEEE 30th International Symposium on On-Line Testing and Robust System Design (IOLTS);2024-07-03

2. Variability in Switching Characteristics of RRAM Based 1T-1R Configuration and Memory Array;2024 IEEE 4th International Conference on VLSI Systems, Architecture, Technology and Applications (VLSI SATA);2024-05-17

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