Low-leakage, high-efficiency, reliable VPE InGaAs 1.0-1.7 µm photodiodes-Reference-Cited by-同舟云学术

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Low-leakage, high-efficiency, reliable VPE InGaAs 1.0-1.7 µm photodiodes

Published:1981-09 Issue:9 Volume:2 Page:217-219
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Olsen G.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31843/01481893.pdf?arnumber=1481893

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation Modes of InGaAs p-n Diodes Operated at Forward Biases;Japanese Journal of Applied Physics;1998-10-15

2. Process characterization and evaluation of hydride VPE grown Ga x In1−x As using a Ga/In alloy source;Journal of Electronic Materials;1992-04

3. Improvement in dark current characteristics and long-term stability of mesa InGaAs/InP p-i-n photodiodes with two-step SiN/sub x/ surface passivation;IEEE Photonics Technology Letters;1991-10

4. Photodetectors for Long-Wavelength Lightwave Systems;Optoelectronic Technology and Lightwave Communications Systems;1989

5. Iii–V Semiconductor Devices;Materials Processing: Theory and Practices;1989

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