Intersubband absorption saturation in InGaAs-AlAs-AlAsSb coupled quantum wells-Reference-Cited by-同舟云学术

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Intersubband absorption saturation in InGaAs-AlAs-AlAsSb coupled quantum wells

Published:2003-11 Issue:11 Volume:39 Page:1356-1361
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:en
Short-container-title:IEEE J. Quantum Electron.

Author:

Gopal A.V.,Simoyama T.,Yoshida H.,Kasai J.-i.,Mozume T.,Ishikawa H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/3/27838/01242353.pdf?arnumber=1242353

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3. Molecular Beam Epitaxy-Grown Wide Band Gap II–VI Semiconductors for Intersubband Device Applications;Molecular Beam Epitaxy;2018

4. Metastable CdSe/MgSe quantum wells prepared by MBE with near IR intersubband absorption;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05

5. Nanoscale all-optical plasmonic switching using electromagnetically induced transparency;Applied Optics;2012-07-11

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