Threshold and Characteristic LETs in SRAM SEU Cross Section Curves
Author:
Affiliation:
1. Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA), Sagamihara, Japan
Funder
Japan Society for the Promotion of Science (JSPS) under JSPS KAKENHI
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/10103955/10042426.pdf?arnumber=10042426
Reference36 articles.
1. Scaling of SEU mapping and cross section, and proton induced SEU at reduced supply voltage
2. Waveform Observation of Digital Single-Event Transients Employing Monitoring >Transistor Technique
3. Process Variation Aware Analysis of SRAM SEU Cross Sections Using Data Retention Voltage
4. Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices
5. Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID
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