Damage Separation in Proton-Irradiated Bipolar Junction Transistors as a Function of Energy-Reference-Cited by-同舟云学术

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Damage Separation in Proton-Irradiated Bipolar Junction Transistors as a Function of Energy

Published:2023-08 Issue:8 Volume:70 Page:1900-1907
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Witczak Steven C.¹^ORCID,Schrimpf Ronald D.²^ORCID,Fleetwood Daniel M.²^ORCID,Messenger Scott R.¹^ORCID,Langlois Michael S.¹,McCurdy Michael W.²,Rodriguez John A.¹

Affiliation:

1. Northrop Grumman Corporation, Linthicum Heights, Virginia, MD, USA

2. Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA

Funder

Northrop Grumman Remote Sensing Programs Initiative

Internal Technical Activity Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10221199/10065393.pdf?arnumber=10065393

Reference37 articles.

1. Improved Model for Increased Surface Recombination Current in Irradiated Bipolar Junction Transistors

2. Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

3. Damage correlations in semiconductors exposed to gamma, electron and proton radiations

4. X-Ray Wafer Probe for Total Dose Testing

5. Review of displacement damage effects in silicon devices

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