Study of Proton-Induced Defects in 40-nm CMOS SPADs-Reference-Cited by-同舟云学术

Study of Proton-Induced Defects in 40-nm CMOS SPADs

Published:2023-08 Issue:8 Volume:70 Page:1680-1686
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Jouni Ali¹^ORCID,Malherbe Victor²,Mamdy Bastien²^ORCID,Thery Thomas²^ORCID,Sicre Mathieu²^ORCID,Soussan Dimitri²,Lorquet Vincent²,Paoli Serge De²^ORCID,Belloir Jean-Marc¹^ORCID,Lalucaa Valérian¹,Virmontois Cédric¹,Gasiot Gilles²^ORCID,Goiffon Vincent³^ORCID

Affiliation:

1. CNES, Toulouse, France

2. STMicroelectronics, Crolles, France

3. ISAE-SUPAERO, Toulouse, France

Funder

CNES

STMicroelectronics

Institut Supérieur de l'Aéronautique et de l'Espace

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10221199/10070803.pdf?arnumber=10070803

Reference18 articles.

1. Spectroscopie du courant d’obscurité induit par les effets de déplacement atomique des radiations spatiales et nucléaires dans les capteurs d’images CMOS à photodiode pincée;belloir,2016

2. Modeling the tunnelling current in reverse-biased p/n junctions

3. Continuous distribution of defect states and band gap narrowing in neutron irradiated GaAs

4. Amorphous Inclusions in Irradiated Silicon and Their Effects on Material and Device Properties

5. Industrialised SPAD in 40 nm technology;pellegrini;IEDM Tech Dig,2018

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