Investigations on Ionizing Dose Deposition in Thin-Layered Devices: Sample-to-Sample Variability and Electronic Equilibrium Dependence-Reference-Cited by-同舟云学术

Investigations on Ionizing Dose Deposition in Thin-Layered Devices: Sample-to-Sample Variability and Electronic Equilibrium Dependence

Published:2023-08 Issue:8 Volume:70 Page:2027-2033
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Gaillardin Marc¹^ORCID,Lambert Damien²^ORCID,Girard Sylvain³^ORCID,Aubert Damien¹^ORCID,Assaillit Gilles¹,Morana Adriana²^ORCID,Nobre-Tavares Sophie¹,Meyer Arnaud³^ORCID,Vidalot Jeoffray²,Delbos Christophe¹,Paillet Philippe²^ORCID,Ginibrière Thierry¹,De Nardi Roberto¹,Poujols David¹

Affiliation:

1. CEA, DAM, CEG, Gramat, France

2. CEA, DAM, DIF, Arpajon, France

3. Laboratoire Hubert Curien, UMR-CNRS 5516, Université de Saint-Etienne, Saint-Étienne, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10221199/10026285.pdf?arnumber=10026285

Reference22 articles.

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2. Variations in Semiconductor Device Response in a Medium-Energy X-Ray Dose-Enhancing Environment

3. Optimum laboratory radiation source for hardness assurance testing

4. Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxides

5. GEANT4-a simulation toolkit;agostinelli;Nucl Instrum Methods Phys Res A Accel Spectrom Detect Assoc Equip,2003

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