A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28
Author:
Affiliation:
1. University of Electronic Science and Technology of China,Chengdu,China
2. Chengdu Danxi Technology Co., Ltd,,Chengdu,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10121189/10121178/10121182.pdf?arnumber=10121182
Reference5 articles.
1. A Monolithic GaN Direct 48V/1V AHB Switching Power IC with Auto-Lock Auto-Break Level Shifting, SelfBootstrapped Hybrid Gate Driving, and On-Die Temperature Sensing;yan;ISSCC,2022
2. Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch With Temperature-Compensated Fast Turn-on Technique for Achieving Switching Frequency of 50 MHz and Slew Rate of 118.3 V/Ns
3. Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs;han;TIE,2022
4. 18.2 A Monolithic E-Mode GaN 15W 400V Offline Self-Supplied Hysteretic Buck Converter with 95.6% Efficiency
5. Long, Short, Monolithic - The Gate Loop Challenge for GaN Drivers: Invited Paper
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