A Switchless Bidirectional Distributed Amplifier with 2-dB Gain Variation in One Decade Frequency Range in 90-nm CMOS Process-Reference-Cited by-同舟云学术

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A Switchless Bidirectional Distributed Amplifier with 2-dB Gain Variation in One Decade Frequency Range in 90-nm CMOS Process

Published:2022-08-29 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
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Author:

Tsai Wei-Hsuan¹,Wang Yunshan¹,Wang Huei¹

Affiliation:

1. Graduate Institute of Communication Engineering National Taiwan University,Taipei,Taiwan,106

Funder

Taiwan Semiconductor Manufacturing Company

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9882303/9882341/09882473.pdf?arnumber=9882473

Reference8 articles.

1. A SiGe-BiCMOS Wideband Active Bidirectional Digital Step Attenuator With Bandwidth Tuning and Equalization

2. A SiGe-BiCMOS Wideband (2–22 GHz) Active Power Divider/Combiner Circuit Supporting Bidirectional Operation

3. Single and Four-Element $Ka$-Band Transmit/Receive Phased-Array Silicon RFICs With 5-bit Amplitude and Phase Control

4. A Switchless SiGe BiCMOS Bidirectional Amplifier for Wideband Radar Applications

5. A Bidirectional TX/RX Four-Element Phased Array at 60 GHz With RF-IF Conversion Block in 90-nm CMOS Process

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Compact Low-Loss Bi-directional Amplifier for Ku-band;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20

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