A Compact Broadband Power Amplifier Covering 23-39 GHz for 5G Mobile Communication
Author:
Affiliation:
1. Tsinghua University,School of Integrated Circuits,Beijing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9882303/9882341/09882449.pdf?arnumber=9882449
Reference7 articles.
1. A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process
2. A Broadband Transformer-Based Power Amplifier Achieving 24.5-dBm Output Power Over 24–41 GHz in 65-nm CMOS Process
3. A Ku-Band CMOS Power Amplifier With Series-Shunt LC Notch Filter for Satellite Communications
4. A 19.7-38.9-GHz Ultrabroadband PA With Phase Linearization for 5G in 28-nm CMOS Process;huang;IEEE Microwave and Wireless Components Letters,2021
5. A 28-GHz CMOS Broadband Single-Path Power Amplifier with 17.4-dBm P1dB for 5G Phased-Array
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1. A Compact 26-42GHz Triple-Stacked Power Amplifier with 24.7 dBm PSAT in 55-nm CMOS;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14
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