A pFET-access radiation-hardened SRAM for extreme environments-Reference-Cited by-同舟云学术

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A pFET-access radiation-hardened SRAM for extreme environments

Published:2008-08 Issue: Volume: Page:
ISSN:
Container-title:2008 51st Midwest Symposium on Circuits and Systems
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Author:

Barlow Matthew,Fu Guoyuan,Hollosi Brent,Lee Chris,Di Jia,Mantooth H. Alan,Schupbach Marcelo,Berger Richard

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4603800/4616714/04616825.pdf?arnumber=4616825

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An overview of critical applications of resistive random access memory;Nanoscale Advances;2024

2. STT-MRAM Technology For Energy-Efficient Cryogenic Memory Applications;2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS);2023-02-27

3. BIST-Supported Cryogenic Write Trimming With In-MRAM Computing Case Study;IEEE Transactions on Nanotechnology;2023

4. Spin-Related Superconducting Devices for Logic and Memory Applications;Advanced Devices & Instrumentation;2023-01

5. Design of 12T SRAM with improved stability for IOT application;2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP);2022-02-12

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