To suppress photoexcited current of hydrogenated polysilicon TFTs with low temperature oxidation of polychannel-Reference-Cited by-同舟云学术

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To suppress photoexcited current of hydrogenated polysilicon TFTs with low temperature oxidation of polychannel

Published:2001-01 Issue:1 Volume:22 Page:23-25
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yaung D.N.,Fang Y.K.,Chen C.H.,Hung C.C.,Tsao F.C.,Wuu S.G.,Liang M.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/19302/00892432.pdf?arnumber=892432

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier transport across grain boundaries in polycrystalline silicon thin film transistors;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2016-02

2. Thermal oxidation as a simple method to increase resolution in nanoimprint lithography;Microelectronic Engineering;2011-11

3. Elimination of Photoleakage Current in Poly-Si TFTs Using a Metal-Shielding Structure;Electrochemical and Solid-State Letters;2008

4. Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region;Microelectronics Journal;2006-11

5. Estimating the influence of light on the performance of polycrystalline thin-film transistors at the sub-threshold region;MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference

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