Recent Progress in Silicon Devices for Ultra-High Power Applications-Reference-Cited by-同舟云学术

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Recent Progress in Silicon Devices for Ultra-High Power Applications

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Vobecky J.¹,Vemulapati U.¹,Wikstrom T.¹,Boksteen B.¹,Dugal F.¹,Stiasny T.¹,Corvasce C.¹

Affiliation:

1. Hitachi ABB Power Grids,Lenzburg,Switzerland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720569.pdf?arnumber=9720569

Reference14 articles.

1. 10 kV IGCT and Fast Recovery Diode: with an Improved Technology Trade-off Performance;vemulapati;Proc PCIM'2021,0

2. The Bi-mode Insulated Gate Bipolar Transistor (BIGT): A Potential Technology for Higher Power Applications;rahimo;Proc of the ISPSD'2009,0

3. Second generation BiGT chip advancing the StakPak platform;boksteen;PCIM 2021,0

4. The New High Reliable Press Pack IGBT for Modular Multilevel Converter in VSC-HVDC Applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Commutation of Thyristors for High- Voltage Direct Current Transmission (HVDC);IEEE Transactions on Electron Devices;2024-01

2. Transient Current Balancing of Parallel IGCTs in 10-kV/10-kA Hybrid DC Circuit Breaker;IEEE Transactions on Industrial Electronics;2023-10

3. Sidewall Modification Process for Trench Silicon Power Devices;Electronics;2023-05-25

4. Fast Recovery Diodes for High-Current High- Voltage Insulated Gate Bipolar Transistors;IEEE Electron Device Letters;2022-08

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