SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs
Author:
Affiliation:
1. The Hong Kong University of Science and Technology,Hong Kong,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720653.pdf?arnumber=9720653
Reference13 articles.
1. On the origin of interface states at oxide/III-nitride heterojunction interfaces
2. Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3as gate dielectric
3. p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability
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