Trap Capture and Emission Dynamics in Ferroelectric Field-Effect Transistors and their Impact on Device Operation and Reliability-Reference-Cited by-同舟云学术

Trap Capture and Emission Dynamics in Ferroelectric Field-Effect Transistors and their Impact on Device Operation and Reliability

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Tasneem Nujhat¹,Wang Zheng¹,Zhao Zijian²,Upadhyay Navnidhi³,Lombardo Sarah⁴,Chen Hang⁵,Hur Jae¹,Triyoso Dina⁶,Consiglio Steven⁶,Tapily Kanda⁶,Clark Robert⁶,Leusink Gert⁶,Kurinec Santosh²,Datta Suman³,Yu Shimeng¹,Ni Kai²,Passlack Matthias⁷,Chern Winston¹,Khan Asif¹

Affiliation:

1. School of ECE, Georgia Tech

2. Rochester Institute of Technology,Electrical & Microelectronic Engineering Dept.

3. University of Notre Dame,Dept. of EE

4. School of MSE, Georgia Tech

5. Institute of Electronics & Nanotechnology, Georgia Tech

6. TEL Technology Center, America, LLC,USA

7. Corporate Research, Taiwan Semiconductor Manufacturing Company,San Jose,CA,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720615.pdf?arnumber=9720615

Reference7 articles.

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