A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise-Reference-Cited by-同舟云学术

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A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Park Donghyuk,Joo Woong,Lee Yunki,Nah Seungjoo,Jeong Heegeun,Kim Bumsuk,Jung Sangil,Lee Jesuk,Kim Yitae,Moon Chang-Rok,Park Yongin,Lee Seung-Wook,Han Jinhwa,Jang Dongyoung,Kwon Heesang,Cha Seungwon,Kim Mihye,Lee Haewon,Suh Sungho

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993487.pdf?arnumber=8993487

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inverse design of color routers in CMOS image sensors: toward minimizing interpixel crosstalk;Nanophotonics;2024-07-01

2. Dispersion-engineered metasurfaces for high-sensitivity color image sensors;Optical Review;2024-04-24

3. Color arrestor pixels for high-fidelity, high-sensitivity imaging sensors;Nanophotonics;2024-04-15

4. Gate-controlled gain tuning of fully depleted silicon-on-insulator-based 1 T pixel for in-sensor white balance;Japanese Journal of Applied Physics;2024-02-05

5. A Low-Noise Area-Efficient Column-Parallel ADC With an Input Triplet for a 120-dB High Dynamic Range CMOS Image Sensor;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023-12

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