Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices-Reference-Cited by-同舟云学术

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Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
language:
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Author:

Mohiyaddin F. A.,Chan BT,Ivanov Ts.,Spessot A.,Matagne P.,Lee J.,Govoreanu B.,Raduimec I. P.,Simion G.,Stuyck N. I. Dumoulin,Li R.,Ciubotaru F.,Eneman G.,Bufler F. M.,Kubicek S.,Jussot J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993541.pdf?arnumber=8993541

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compressively strained epitaxial Ge layers for quantum computing applications;Materials Science in Semiconductor Processing;2024-05

2. Simulation study on quantum dot formation of double-qubit-Si-MOS device;Microelectronics Journal;2023-12

3. Advances in Modeling of Noisy Quantum Computers: Spin Qubits in Semiconductor Quantum Dots;IEEE Access;2023

4. Modelling of Electron Injection and Confinement in Cryogenic 22-nm FD-SOI Quantum Dot Arrays;2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2022-10-24

5. Cryogenic Transistor Confinement Well Simulation through Material and Carrier Transport Decoupling;2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2022-10-24

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