Next Generation Ferroelectric Memories enabled by Hafnium Oxide-Reference-Cited by-同舟云学术

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Next Generation Ferroelectric Memories enabled by Hafnium Oxide

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Mikolajick T.,Slesazeck S.,Schroeder U.,Lomenzo P. D.,Breyer E. T.,Mulaosmanovic H.,Hoffmann M.,Mittmann T.,Mehmood F.,Max B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993447.pdf?arnumber=8993447

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications;Journal of the Korean Physical Society;2024-05-16

2. A Novel RRAM-Based TCAM Search Array;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

3. Analysis and Design of FeFET Synapse With Stacked-Nanosheet Architecture Considering Cycle-to-Cycle Variations for Neuromorphic Applications;IEEE Open Journal of Nanotechnology;2024

4. Effect of Zr substitution on structural, electronic, thermodynamic and optical properties of $$(\textrm{HfO}_2)_{\text{p}}$$ clusters: a DFT study of $$(\textrm{HfO}_2)_{\textrm{p}}$$ and $$\textrm{Hf}_{\textrm{q}} \textrm{Zr}_{\text {r}} \textrm{O}_{2(\textrm{q}+\textrm{r})}$$ clusters;Journal of Nanoparticle Research;2024-01

5. 300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching;Materials Science in Semiconductor Processing;2023-09

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