Impact of Interface Trap Charge on Analog/RF parameters of Novel Heterogeneous Gate Dielectric Tri-Metal Gate FinFET
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9484856/9484857/09484911.pdf?arnumber=9484911
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1. Assessment of temperature and ITCs on single gate L-shaped tunnel FET for low power high frequency application;Engineering Research Express;2024-03-01
2. Physical insights of interface traps and self-heating effect on electrical response of DMG FinFETs in overlap and underlap configurations: analog/RF perspective;Physica Scripta;2023-12-29
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4. Impact of tunneling length on analog/RF performance of L-shaped TFET;2021 First International Conference on Advances in Computing and Future Communication Technologies (ICACFCT);2021-12-16
5. Design and Compressive Analysis of Junctionless Multigate FinFET Towards Low Power and High Frequency Applications;Silicon;2021-11-08
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