Experimental correlation between substrate properties and GaAs MESFET transconductance
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/31915/01484258.pdf?arnumber=1484258
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. X-ray topography of gallium arsenide used for MESFET fabrication;Semiconductor Science and Technology;1992-01-01
2. Distinguishing between EL2 and dislocation formation mechanisms in GaAs by mapping topographies;Journal of Crystal Growth;1990-06
3. Low-temperature formation of metal/molecular-beam epitaxy-GaAs(100) interfaces: Approaching ideal chemical and electronic limits;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-07
4. Redistribution of deep levels in semi‐insulating GaAs wafer by rapid thermal processing;Applied Physics Letters;1989-02-27
5. Spatial Inhomogeneities in Rapidly Thermal-Processed GaAs Wafer;MRS Proceedings;1989
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