Characteristics of GaAs PCSS triggered by 1 μJ laser diode-Reference-Cited by-同舟云学术

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Characteristics of GaAs PCSS triggered by 1 μJ laser diode

Published:2015-08 Issue:4 Volume:22 Page:1991-1996
ISSN:1070-9878
Container-title:IEEE Transactions on Dielectrics and Electrical Insulation
language:
Short-container-title:IEEE Trans. Dielect. Electr. Insul.

Author:

Zhang Tian,Liu Kefu,Gao Shijia,Shi Yiwei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/94/7179123/07179159.pdf?arnumber=7179159

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of spot size on the operation mode of GaAs PCSS employing extrinsic photoconductivity;Plasma Science and Technology;2023-12-01

2. Photoexcited carrier dynamics in a GaAs photoconductive switch under nJ excitation;Plasma Science and Technology;2022-06-17

3. Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switches;Optics Letters;2021-02-09

4. Effect of capacitance on positive and negative symmetric pulse with fast rising edge based on GaAsphotoconductive semiconductor switch;Acta Physica Sinica;2019

5. Time jitter characteristics of GaAs photoconductive semiconductor switch in linear mode;Acta Physica Sinica;2018

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