Model-based uniformity control for epitaxial silicon deposition-Reference-Cited by-同舟云学术

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Model-based uniformity control for epitaxial silicon deposition

Published:2002-08 Issue:3 Volume:15 Page:295-309
ISSN:0894-6507
Container-title:IEEE Transactions on Semiconductor Manufacturing
language:en
Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Gower-Hall A.E.,Boning D.S.,Rosenthal P.,Waldhauer A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/66/22007/01022819.pdf?arnumber=1022819

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3. Advanced profile control and the impact of sidewall angle at gate etch for critical nodes;SPIE Proceedings;2008-03-14

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