Electrical characteristics of 0°/±45°/90°-orientation CMOSFET with source/drain fabricated by various ion-implantation methods-Reference-Cited by-同舟云学术

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Electrical characteristics of 0°/±45°/90°-orientation CMOSFET with source/drain fabricated by various ion-implantation methods

Published:1999-04 Issue:4 Volume:46 Page:703-711
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Matsuda T.,Okina M.,Ohzone T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/16273/00753704.pdf?arnumber=753704

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Orientation dependence and asymmetry of subthreshold characteristics in CMOSFETs;2010 International Conference on Microelectronic Test Structures (ICMTS);2010-03

2. A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs;IEICE Transactions on Electronics;2008-08-01

3. A Test Structure for Analysis of Asymmetry and Orientation Dependence of MOSFETs;2007 IEEE International Conference on Microelectronic Test Structures;2007-03

4. A new test structure to measure precise location of hot-carrier-induced photoemission peak from gate center of subquarter-micron n-MOSFETs;ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)

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