Effect of Frost Formation on Operation of GaN Ultraviolet Photodetectors at Low Temperatures-Reference-Cited by-同舟云学术

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Effect of Frost Formation on Operation of GaN Ultraviolet Photodetectors at Low Temperatures

Published:2017-08-01 Issue:15 Volume:17 Page:4752-4756
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

So Hongyun^ORCID,Senesky Debbie G.

Funder

NSF

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://ieeexplore.ieee.org/ielaam/7361/7973110/7939963-aam.pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A biomimetic compound eye lens for photocurrent enhancement at low temperatures;Bioinspiration & Biomimetics;2022-05-24

2. Morphological, optical, and electrical characterizations and cryogenic reliability tests on AlInGaP red light emitting diodes immersed in liquid nitrogen;Journal of Materials Science: Materials in Electronics;2021-10-19

3. Influence of Temperature on Photodetection Properties of Honeycomb‐like GaN Nanostructures;Advanced Materials Interfaces;2021-06-27

4. Photocurrents Recovery in GaN UV Sensors Using Microheaters at Low Temperatures;IEEE Access;2021

5. On-Chip Fully Integrated Field Emission Arrays for High-Voltage MEMS Applications;IEEE Transactions on Electron Devices;2020-09

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