A 201.8-dBc/Hz-FoMT Octave-Tuning-Range LC-VCO IC With a Self-Shifted Voltage-Controlled Novel Varactor in 45-nm CMOS SOI
Author:
Funder
University of Tokyo
Cadence Design Systems
Mentor Graphics
Keysight Technologies
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9661585/9661586/09661757.pdf?arnumber=9661757
Reference5 articles.
1. A low phase noise wide-tuning range class-F VCO based on a dual-mode resonator in 65nm CMOS;dhamani;Proc IEEE Radio Wireless Symp (RWS),2018
2. A Dual-Core 8-17 GHz LC VCO with Enhanced Tuning Switch-less Tertiary Winding and 208.8 dBc/Hz Peak FoMT in 22nm FDSOI
3. A −197.3-dBc/Hz FoMT Wideband LC-VCO IC With a Single Voltage-Controlled IMOS-Based Novel Varactor in 40-nm CMOS SOI
4. A capacitance boosted full-octave LC VCO based 0.7 to 24 GHz fractional-N synthesizer
5. On the use of MOS varactors in RF VCOs
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