A 4.5-GHz-Band Miniature Outphasing GaN HEMT MMIC Power Amplifier
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9661585/9661586/09661670.pdf?arnumber=9661670
Reference8 articles.
1. A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
2. A 70W package-integrated class-E Chireix outphasing RF power amplifier
3. A Novel 1.4-4.8 GHz Ultra-Wideband, over 45% High Efficiency Digitally Assisted Frequency-Periodic Load Modulated Amplifier
4. A 112W GaN dual input Doherty-Outphasing Power Amplifier
5. A 3.9-GHz-Band Outphasing Power Amplifier with Compact Combiner Based on Dual-Power-Level Design for Wide-Dynamic-Range Operation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Introducing AMPR technique for zero crossing bandwidth expansion in outphasing PA;AIP Conference Proceedings;2024
2. Fully Integrated 28-GHz-Band GaN HEMT Outphasing Amplifier Designed by Considering Insertion Loss at Dual-Power-Level Optimization;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
3. A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS;IEICE Transactions on Electronics;2023-11-01
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