Charge pumping SOS-MOS transistor memory-Reference-Cited by-同舟云学术

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Charge pumping SOS-MOS transistor memory

Published:1978 Issue: Volume: Page:
ISSN:
Container-title:1978 International Electron Devices Meeting
language:
Short-container-title:

Author:

Sasaki N.,Nakano M.,Iwai T.,Togei R.

Publisher

IRE

Link

http://xplorestaging.ieee.org/ielx5/9944/31784/01479852.pdf?arnumber=1479852

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation and Optimization of Double-gate MPI 1T DRAM with Gate-induced Drain Leakage Operation;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2019-04-30

2. Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications;Solid-State Electronics;2014-07

3. Bipolar Mode Operation and Scalability of Double-Gate Capacitorless 1T-DRAM Cells;IEEE Transactions on Electron Devices;2010-08

4. A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory;IEEE Transactions on Electron Devices;2006-04

5. A study of highly scalable DG-FinDRAM;IEEE Electron Device Letters;2005-09

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