Plasma Doping of InGaAs at Elevated Substrate Temperature for Reduced Sheet Resistance and Defect Formation
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Published:2014-09
Issue:9
Volume:61
Page:3159-3165
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:
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Short-container-title:IEEE Trans. Electron Devices
Author:
Kong Eugene Y.-J.,Subramanian Sujith,D'Costa Vijay Richard,Chua Lye-Hing,Zou Wei,Chan Cleon,Henry Todd,Yeo Yee-Chia
Funder
National Research Foundation, Singapore
Globalfoundries Singapore Pte. Ltd., Singapore
Economic Development Board, Singapore, for a Graduate Scholarship
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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