Minimized Device Junction Leakage Current at Forward-Bias Body and Applications for Low-Voltage Quadruple-Stacked Common-Gate Amplifier-Reference-Cited by-同舟云学术

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Minimized Device Junction Leakage Current at Forward-Bias Body and Applications for Low-Voltage Quadruple-Stacked Common-Gate Amplifier

Published:2014-05 Issue:5 Volume:61 Page:1231-1236
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

To-Po Wang

Funder

National Science Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6802373/06774866.pdf?arnumber=6774866

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