Memristor: Part I—The Underlying Physics and Conduction Mechanism-Reference-Cited by-同舟云学术

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Memristor: Part I—The Underlying Physics and Conduction Mechanism

Published:2014-04 Issue:4 Volume:61 Page:1054-1061
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mazady Anas,Anwar Mehdi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6776447/06748105.pdf?arnumber=6748105

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel memristor with Au/SnSe/ITO structure: First fabrication via a hydrothermal and sputtering approach;Journal of Alloys and Compounds;2024-08

2. Performance Improvement of Degrading Memristor-Bridge-Based Multilayer Neural Network with Refresh Pulses;International Journal of High Speed Electronics and Systems;2024-07-12

3. Modified nonlinear ion drift model for TiO2 memristor: a temperature dependent study;Journal of Ovonic Research;2024-06-06

4. One memristor–one electrolyte-gated transistor-based high energy-efficient dropout neuronal units;Chinese Physics B;2024-06-01

5. First integrals can explain coexistence of attractors, multistability, and loss of ideality in circuits with memristors;Chaos, Solitons & Fractals;2024-03

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