Three-Dimensional SIP Design of the Four-Channel RF Transceiver Based on Silicon and ALN for X-Band Radar Applications
Author:
Affiliation:
1. School of Microelectronics, Yangtze River Delta Research Institute, Northwestern Polytechnical University, Taicang, China
2. Department of Physics, State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, China
Funder
National Natural Science Foundation of China
Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics
Basic Research Program of Taicang
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5503870/10221737/10180092.pdf?arnumber=10180092
Reference31 articles.
1. Fully Symmetric 3-D Transformers With Through-Silicon via IPD Technology for RF Applications
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3. An Advanced 2.5-D Heterogeneous Integration Packaging for High-Density Neural Sensing Microsystem
4. 3D TSV based high frequency components for RF IC and RF MEMS applications;fernández-bolaños;Proc IEEE Int 3D Syst Integr Conf (3DIC),2016
5. Compact and Reliable T/R Module Prototype for Advanced Space Active Electronically Steerable Antenna in 3-D LTCC Technology
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