Measurement Deviation of the Virtual Junction Temperature by the Saturation Voltage Drop Method for Insulated-Gate Bipolar Transistors-Reference-Cited by-同舟云学术

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Measurement Deviation of the Virtual Junction Temperature by the Saturation Voltage Drop Method for Insulated-Gate Bipolar Transistors

Published:2023-12 Issue:12 Volume:13 Page:1914-1922
ISSN:2156-3950
Container-title:IEEE Transactions on Components, Packaging and Manufacturing Technology
language:
Short-container-title:IEEE Trans. Compon., Packag. Manufact. Technol.

Author:

Li Yumeng¹^ORCID,Guo Chunsheng¹^ORCID,Zhao Di¹,Zhang Shiwei¹,Pan Shijie¹^ORCID,Zhu Hui¹^ORCID,Feng Shiwei¹^ORCID

Affiliation:

1. College of Microelectronics, Beijing University of Technology, Beijing, China

Funder

Natural Science Foundation of Beijing Municipality

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503870/10382162/10319346.pdf?arnumber=10319346

Reference18 articles.

1. Gate–Emitter Pre-threshold Voltage as a Health-Sensitive Parameter for IGBT Chip Failure Monitoring in High-Voltage Multichip IGBT Power Modules

2. PSpice-COMSOL-Based 3-D Electrothermal–Mechanical Modeling of IGBT Power Module

3. Asynchronous Gate Signal Driving Method for Reducing Current Imbalance of Paralleled IGBT Modules Caused by Driving Circuit Parameter Difference

4. A Transient 3-D Thermal Modeling Method for IGBT Modules Considering Uneven Power Losses and Cooling Conditions

5. Embedded Hardware Artificial Neural Network Control for Global and Real-Time Imbalance Current Suppression of Parallel Connected IGBTs

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