Terahertz broadband absorption and phonon dispersion of gallium telluride
Author:
Affiliation:
1. Chinese Academy of Sciences,GBA Branch of Aerospace Information Research Institute,Guangzhou,China,510700
Funder
National Natural Science Foundation of China
Research and Development
Science and Technology Planning Project of Guangdong Province
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10490444/10491083/10491096.pdf?arnumber=10491096
Reference17 articles.
1. Electronic structure and properties of layered gallium telluride
2. Modulation of electronic and optical properties of GaTe monolayer by biaxial strain and electric field
3. Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
4. Second and third harmonic generation in few-layer gallium telluride characterized by multiphoton microscopy
5. Photoconductivity, low-temperature conductivity, and magnetoresistance studies on the layered semiconductor GaTe
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