Transferability of the Light-Soaking Benefits on Silicon Heterojunction Cells to Module
Author:
Affiliation:
1. STI IMT PV-LAB, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland
2. PV-Center, Centre Suisse d'Electronique et de Microtechnique SA, Neuchatel, Switzerland
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5503869/9760484/09716147.pdf?arnumber=9716147
Reference24 articles.
1. Evaluating the Impact of and Solutions to Light-induced Degradation in Silicon Heterojunction Solar Cells
2. Large‐Area Boron‐Doped 1.6 Ω cm p‐Type Czochralski Silicon Heterojunction Solar Cells with a Stable Open‐Circuit Voltage of 736 mV and Efficiency of 22.0%
3. Evidence for a Light‐Induced Degradation Mechanism at Elevated Temperatures in Commercial N‐Type Silicon Heterojunction Solar Cells
4. Reinterpretation of degradation kinetics of amorphous silicon
5. Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
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