Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells-Reference-Cited by-同舟云学术

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Published:2019-03 Issue:2 Volume:9 Page:346-354
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Ingenito Andrea^ORCID,Nogay Gizem^ORCID,Stuckelberger Josua^ORCID,Wyss Philippe,Gnocchi Luca,Allebe Christophe,Horzel Jorg,Despeisse Matthieu,Haug Franz-Josef,Loper Philipp,Ballif Christophe^ORCID

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Swiss Federal Office for Energy

European Commission in the Horizon 2020 DISC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielaam/5503869/8643687/8588322-aam.pdf

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