Boron Oxide Encapsulated Vertical Bridgman: A Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth-Reference-Cited by-同舟云学术

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Boron Oxide Encapsulated Vertical Bridgman: A Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth

Published:2007-08 Issue:4 Volume:54 Page:798-801
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Zappettini Andrea,Zha Mingzheng,Pavesi Maura,Zanichelli Massimiliano,Bissoli Francesco,Zanotti Lucio,Auricchio Natalia,Caroli Ezio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/4291680/04291805.pdf?arnumber=4291805

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent progress in CdZnTe based room temperature detectors for nuclear radiation monitoring;Progress in Nuclear Energy;2021-10

2. Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-09

3. Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field;Journal of Physics D: Applied Physics;2013-08-23

4. High-resolution x-ray characterization of mosaic crystals for hard x-ray astronomy;Optical Engineering;2012-04-23

5. Growth of Cd0.9Zn0.1Te Bulk Crystals;Comprehensive Semiconductor Science and Technology;2011

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