Author:
He Minghao,Zeng Fanming,Cheng Wei-Chih,Wang Qing,Yu Hongyu,Ang Kah Wee
Cited by
5 articles.
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1. Research of single-event burnout in vertical Ga2O3 FinFET by low carrier lifetime control;Semiconductor Science and Technology;2024-07-18
2. Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs;Microelectronics Reliability;2023-10
3. Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-06-30
4. Investigation of Lateral Gallium Oxide MOSFET with Discrete Field Plate by Calibrated Numerical Simulation;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07
5. Study of Different Gate Materials on Performance of Si Based MOSFET;2023 3rd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST);2023-01-07