Quaternary MIN Logic Gate with Ballistic Graphene Devices-Reference-Cited by-同舟云学术

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Quaternary MIN Logic Gate with Ballistic Graphene Devices

Published:2024-07-08 Issue: Volume: Page:598-603
ISSN:
Container-title:2024 IEEE 24th International Conference on Nanotechnology (NANO)
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Author:

Rallis Konstantinos¹,Tsintotas Konstantinos A.¹,Dimitrakis Panagiotis²,Rubio Antonio³,Sirakoulis Georgios Ch.¹

Affiliation:

1. Democritus University of Thrace,Department of Electrical and Computer Engineering,Xanthi,Greece

2. National Centre For Scientific Research Demokritos,Agia Paraskevi,Greece

3. Universitat Politecnica de Catalunya,Department of Electronic Engineering,Barcelona,Spain

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10628446/10628545/10628872.pdf?arnumber=10628872

Reference24 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The electronic properties of graphene

3. Graphene transistors

4. Graphene Nanoribbon Based Complementary Logic Gates and Circuits

5. Low Energy, Non-Cortical, Graphene Nanoribbon-Based STDP Plastic Synapses

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