Schottky-gate bulk effect digital devices
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/5/31150/01450439.pdf?arnumber=1450439
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Transferred Electron Amplifiers and Logic and Functional Devices;GaAs Devices and Circuits;1987
2. Gallium arsenide transferred‐electron devices by low‐level ion implantation;Journal of Applied Physics;1980-06
3. Avalanche-Diode Microwave Oscillators, Amplifiers, and Gunn Devices;Semiconductor Devices and Integrated Electronics;1980
4. WP-A6 transferred-electron device development using silicon-ion implantation in GaAs;IEEE Transactions on Electron Devices;1979-11
5. Stationary domains in planar gunn elements;Physica Status Solidi (a);1979-03-16
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