Degradation of oxide films due to radiation effects in exposure to plasmas in sputter deposition and backsputtering-Reference-Cited by-同舟云学术

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Degradation of oxide films due to radiation effects in exposure to plasmas in sputter deposition and backsputtering

Published:1974 Issue:9 Volume:62 Page:1236-1241
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

McCaughan D.V.,Kushner R.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31184/01451532.pdf?arnumber=1451532

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers;Semiconductor physics, quantum electronics and optoelectronics;2008-07-30

2. Sputter-Metallization-Induced Electronic Defects in Thermal SiO2;physica status solidi (a);2001-10

3. Effect of annealing temperature on electrical stability of radio frequency magnetron sputtered silicon oxides;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-03

4. Development of Na+-sensitive membranes based on sputtered Na-Al-Si glasses;Mikrochimica Acta;1995-03

5. Structural Characteristics of Combination Oxide Consisting of Dry ThermalSiO2and SputteredSiO2;Japanese Journal of Applied Physics;1994-05-15

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