Output conductance frequency dispersion and low-frequency noise in HEMTs and MESFETs-Reference-Cited by-同舟云学术

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Output conductance frequency dispersion and low-frequency noise in HEMTs and MESFETs

Published:1989 Issue:9 Volume:37 Page:1478-1481
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Reynoso-Hernandez J.A.,Graffeuil J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx1/22/1397/00032235.pdf?arnumber=32235

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs;IEEE Transactions on Electron Devices;2021-09

2. Large-Signal Time-Domain Waveform-Based Transistor Modeling;Microwave De-embedding;2014

3. An Active Bias Network for the Characterization of Low-Frequency Dispersion in High-Power Microwave Electron Devices;IEEE Transactions on Instrumentation and Measurement;2013-10

4. Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors;IEEE Transactions on Electron Devices;2012-11

5. Quantification of surface state effects in GaAs MESFETs;IOP Conference Series: Materials Science and Engineering;2012-02-07

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