Scaled transistors with 2D materials from the 300mm fab-Reference-Cited by-同舟云学术

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Scaled transistors with 2D materials from the 300mm fab

Published:2020-06 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Silicon Nanoelectronics Workshop (SNW)
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Author:

Asselberghs I.,Schram T.,Smets Q.,Groven B.,Brems S.,Phommahaxay A.,Cott D.,Dupuy E.,Radisic D.,Marneffe J-F de,Thiam A.,Li W.,Devriendt K.,Gaur A.,Maurice T.,Lin D.,Morin P.,Radu I.P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9129833/9131605/09131651.pdf?arnumber=9131651

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-dimensional materials for future information technology: status and prospects;Science China Information Sciences;2024-05-29

2. 3D integration of 2D electronics;Nature Reviews Electrical Engineering;2024-04-25

3. Button shear testing for adhesion measurements of 2D materials;Nature Communications;2024-03-18

4. Wafer-scale characterization for two-dimensional material layers;Japanese Journal of Applied Physics;2024-03-01

5. Observation of Rich Defect Dynamics in Monolayer MoS₂;ACS Nano;2023-07-25

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